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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1443 DESCRIPTION *With TO-220Fa package *Low collector saturation voltage *Fast switching speed *High DC current gain APPLICATIONS *High speed power switching applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector Base * Absolute maximum ratings(Ta=25) SYMBOL VCBO VCEO VEBO IC ICM IB B PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current TC=25 CONDITIONS Open emitter Open base Open collector VALUE -100 -60 -7 -10 -20 -5 30 UNIT V V V A A A PC Collector power dissipation Ta=25 2 150 -55~150 W Tj Tstg Junction temperature Storage temperature Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL VCEO(SUS) VCEsat-1 VCEsat-2 VBEsat-1 VBEsat-2 ICBO ICEX IEBO hFE-1 hFE-2 hFE-3 Cob fT PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=-6A , IB=-0.6A;L=1mH IC=-6A, IB=-0.3A IC=-8A, IB=-0.4A IC=-6A, IB=-0.3A IC=-8A, IB=-0.4A VCB=-60V, IE=0 VCE=-60V,VBE=1.5V Ta=125 VEB=-5V; IC=0 IC=-1A ; VCE=-2V IC=-2A ; VCE=-2V IC=-6A ; VCE=-2V IE=0 ; VCB=-10V,f=1MHz IC=-1A ; VCE=-10V 100 100 60 230 80 MIN -60 TYP. 2SA1443 MAX UNIT V -0.3 -0.5 -1.2 -1.5 -10 -10 -1.0 -10 V V V V A A mA A 400 pF MHz Switching times ton ts tf Turn-on time Storage time Fall time IC=-6A ; RL=8.3 IB1=- IB2=-0.3A VCC-50V 0.3 1.5 0.3 s s s hFE-2 Classifications M 100-200 L 150-300 K 200-400 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1443 Fig.2 Outline dimensions (unindicated tolerance:0.15 mm) 3 |
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